Corrosion behaviors of Cr2AlC/α-Al2O3 composites in 3.5 wt. % NaCl aqueous solution

Cr₂AlC and its composites containing α-Al₂O₃ (6.1 and 15.2 wt %) were prepared by hot pressing and their corrosion behaviors in air-saturated 3.5 wt % NaCl aqueous solution were investigated by electrochemical testing methods. It was revealed that the secondary phase of Al₂O₃ particles mainly distributed along grain boundaries of Cr₂AlC matrix. The potentiodynamic polarization measurements showed that the corrosion current densities of these Cr₂AlC composites were lower than that of the pure Cr₂AlC. The Aluminum in Cr₂AlC was prone to be attacked more easily. When immersed at open circuit potential (OCP), Al readily slipped out from Cr₂AlC matrix into NaCl solution in the form of dissoluble species. But in the case of polarization, regardless of potentiostatic polarization or potentiodynamic polarization, more de-intercalated Al, reacted with the electrolyte to form corrosion products of Al₂O₃ and/or AlOOH and deposited on the sample surface. For Cr₂AlC/α-Al₂O₃ composites, the presence of Al₂O₃ weakened the corrosion along grain boundaries by partly blocking the permeation of electrolyte and inhibiting the anodic dissolution process.     

The effect of Cu addition on the thermoelectric properties of Cu2CdGeSe4

Recently, research in copper based quaternary chalcogenide materials has focused on the study of thermoelectric properties due to the complexity in the crystal structure. In the present work, stoichiometric quaternary chalcogenide compounds Cu_2+xCd_1−xGeSe₄ (x = 0, 0.025, 0.05, 0.075, 0.1, 0.125) were prepared by solid state synthesis. The powder X-ray diffraction patterns of all the samples showed a tetragonal crystal structure with the space group I-42m of the main phase, whereas the samples with x = 0 and x = 0.025 revealed the presence of an orthorhombic phase in addition to the main phase as confirmed by Rietveld analysis. The elemental composition of all the samples characterized by Electron Probe Micro Analyzer showed a slight deviation from the nominal composition. The transport properties were measured in the temperature range of 300 K–723 K. The electrical conductivity of all the samples increased with increasing Cu content due to the enhancement of the hole concentration caused by the substitution of Cd (divalent) by Cu (monovalent). The positive Seebeck coefficient of all the samples in the entire temperature ranges indicates that holes are the majority carriers. The Seebeck coefficient of all the samples decreased with increasing Cu content and showed a reverse trend to the electrical conductivity. The total thermal conductivity of all the samples decreased with increasing temperature which was dominated by the lattice contribution. The maximum figure of merit ZT = 0.42 at 723 K was obtained for the compound Cu_2.1Cd_0.9GeSe₄.     

Twin screw granulation – review of current progress

Twin screw granulation (TSG) is a new process of interest to the pharmaceutical community that can continuously wet granulate powders, doing so at lower liquid concentrations and with better product consistency than found by a high shear batch mixer. A considerable body of research has evolved over the short time since this process was introduced but generally with little comparison of results. A certain degree of confidence has been developed through these studies related to how process variables and many attributes of machinery configuration will affect granulation but some major challenges still lay ahead related to scalability, variations in the processing regimes related to degree of channel fill and the impact of wetting and granulation of complex powder formulations. This review examines the current literature for wet granulation processes studied in twin screw extrusion machinery, summarizing the influences of operational and system parameters affecting granule properties as well as strives to provide some practical observations to newly interested users of the technique.     

Influences of Ga concentration on performances of CuInGaSe2 cells fabricated by sputtering-based method with ceramic quaternary target

Copper Indium Gallium Selenide (Cu(In,Ga)Se₂, CIGSe) absorbers with different Ga contents were prepared by sputtering CIGSe ceramic targets and post-annealing. CIGSe solar cell devices were fabricated with other functional layers. The device performances and absorber properties were investigated. Increasing Ga content led to an increase in V_OC and a decrease in J_SC. Ga was supposed to diffuse towards back contact during the annealing process. The best performance was obtained as the ratio of Ga/(In + Ga) reaches 0.32 with the efficiency of 13.8% and a V_OC of 537 mV.     

Optimum lateral extent of soil domain for dynamic SSI analysis of RC framed buildings on pile foundations

This article describes a novel approach for deciding optimal horizontal extent of soil domain to be used for finite element based numerical dynamic soil structure interaction (SSI) studies. SSI model for a 12 storied building frame, supported on pile foundation-soil system, is developed in the finite element based software framework, OpenSEES. Three different structure-foundation configurations are analyzed under different ground motion characteristics. Lateral extent of soil domain, along with the soil properties, were varied exhaustively for a particular structural configuration. Based on the reduction in the variation of acceleration response at different locations in the SSI system (quantified by normalized root mean square error, NRMSE), the optimum lateral extent of the soil domain is prescribed for various structural widths, soil types and peak ground acceleration levels of ground motion. Compared to the past studies, error estimation analysis shows that the relationships prescribed in the present study are credible and more inclusive of the various factors that influence SSI. These relationships can be readily applied for deciding upon the lateral extent of the soil domain for conducting precise SSI analysis with reduced computational time.     

Experimental and numerical assessment of grain boundary energies in polycrystalline uranium dioxide

Uranium dioxide ceramics are widely used as nuclear fuels. Thus, it is important to understand the role of the grain boundaries (GBs) which decisively govern the properties of these polycrystalline materials and subsequently determine their performances. Here, we report a coupled numerical - experimental approach enabling to assess GB energies. Firstly, GB formation energies (γ_gb) were computed for 34 symmetric tilt GBs in UO₂ with molecular dynamics simulations at 1700 K. The surface energies (γ_S) relative to the respective planes of these GBs were calculated as well. The Herring relation was then used to assess the dihedral angles Ψ of the corresponding GB grooves. Secondly, a UO₂ ceramic sample was annealed at 1673 K to obtain GB grooves. The CSL GBs of interest were identified by EBSD and their Ψ angles determined by AFM. Computed and measured Ψ values were found to be very close.     

Effect of annealing temperature on structural and magnetic properties of Co2TiO4 ceramics prepared by sol-gel method

In this paper, polycrystalline Co₂TiO₄ ceramics have been synthesized using a sol-gel process followed by annealing at different temperatures. The lattice size and the average grain size of the samples increases with rise in annealing temperature. The temperature-dependent inverse paramagnetic susceptibilities recorded under zero-field-cooling condition have been fitted according to the Néel's expression for ferrimagnets. Subsequently, the molecular field constants and the corresponding exchange constants have been calculated. The fitting result shows that the magnetic interaction in the system becomes weaker as the annealing temperature rises. In addition, negative magnetization is observed during field-cooling process. The higher annealing temperature is beneficial to the growth of tetrahedral sublattice, leading to a decrease on compensation temperature. Furthermore, magnetization hysteresis loops for all the samples demonstrate the crucial role of grain size on the magnetic properties.     

Digital twin-based assembly data management and process traceability for complex products

Complex products such as satellites, missiles, and aircraft typically have demanding requirements for dynamic data management and process traceability. The assembly process for these complex products involves high complexity, strong dynamics, many uncertainties, and frequent rework and repair, especially in the model development stage. Achieving assembly data management and process traceability for complex products has always been a challenge. A recently proposed solution involves one-to-one mapping of the corresponding physical entity, also known as the digital twin method. This paper proposes a digital twin-based assembly data management and process traceability approach for complex products. First, the dynamic evolutionary process of complex product assembly data was analyzed from three dimensions: granularity, period and version. Then, a framework of digital twin-based assembly data management and process traceability for complex products was constructed. Some core techniques are: 1) workflow-based product assembly data organization and version management; 2) synchronous modeling of the product assembly process based on digital twin; and 3) hierarchical management and traceability of product assembly data based on digital twin. On this basis, an algorithm flowchart for generating a product assembly data package was created, which includes product assembly data management, assembly process traceability, and generation of a product assembly data package. Furthermore, the Digital Twin-based Assembly Process Management and Control System (DT-APMCS) was designed to verify the efficiency of the proposed approach. Some aerospace-related assembly enterprises are currently using DT-APMCS and achieving satisfactory results. Finally, a summary of our work is given, and the future research work is also discussed.     

The digital twin of the quality monitoring and control in the series solar cell production line

With the development of intelligent manufacturing (IM), the Digital twin (DT) has become an important means to the evolution mechanism of the process. Many researchers pay attention on the realization of DT in different industries. Based on the DT and Digital Twin Shop Floor (DTS) model, a novel, high throughput metrology method is proposed in the process quality monitoring and control of the Series Solar Cell Production Line (SSCPL) for detailed performance analysis. The variance of individual loss parameters and their impact on quality performance are quantified and mapped into the virtual space. The nature of their distributions and correlations provide great insights about quality loss mechanisms in process monitoring, helping to prioritize efforts for optimizing the control of the SSCPL in the physical space. Additionally, the parameters can be tied back to the physical space, allowing the data to be used directly for the control in the manufacturing. The data-loop of “Autonomous perception of process parameters - Dynamic behaver mapping - Online monitoring - Online data analysis - Parameters configuration & control” can be obtained in the model. This paper provides an application paradigm for DT and IM.     

Suppressing Ion Migration across Perovskite Grain Boundaries by Polymer Additives

Passivation of organometal halide perovskites with polar molecules has been recently demonstrated to improve the photovoltaic device efficiency and stability. However, the mechanism is still elusive. Here, it is found that both polymers with large and small dipole moment of 3.7 D and 0.6 D have negligible defect passivation effect on the MAPbI₃ perovskite films as evidenced by photothermal deflection spectroscopy. The photovoltaic devices with and without the polymer additives also have comparable power conversion efficiencies around 19%. However, devices with the additives have noticeable improvement in stability under continuous light irradiation. It is found that although the initial mobile ion concentrations are comparable in both devices with and without the additives, the additives can strongly suppress the ion migration during the device operation. This contributes to the significantly enhanced electrical-field stress tolerance of the perovskite solar cells (PVSCs). The PVSCs with polymer additives can operate up to −2 V reverse voltage bias which is much larger than the breakdown voltage of −0.5 V that has been commonly observed. This study provides insight into the role of additives in perovskites and the corresponding device degradation mechanism.